AOSP21357 general description product summary v ds i d (at v gs =-10v) -16a r ds(on) (at v gs =-10v) < 8.5m r ds(on) (at v gs =-4.5v) < 13m applications 100% uis tested 100% rg tested symbol v ds v gs i dm i as avalanche energy l=0.1mh c e as t j , t stg symbol t 10s steady-state steady-state r q jl 30v p-channel mosfet orderable part number package type form minimum order quantity -30v ? latest advanced trench technology ? low r ds(on) ? high current capability ? rohs and halogen-free compliant t a =25c avalanche current c thermal characteristics w i d a 39 -64 mj 76 -16 parameter max c units junction and storage temperature range -55 to 150 typ maximum junction-to-ambient a c/w r q ja 31 59 40 AOSP21357 so-8 tape & reel 3000 v a absolute maximum ratings t a =25c unless otherwise noted 25 v maximum units t a =25c t a =70c maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 ? notebook ac-in load switch ? battery protection charge/discharge power dissipation b 2.0 t a =70c p d -30 3.1 gate-source voltage pulsed drain current c -12.5 parameter drain-source voltage continuous drain current g d s soic-8 top view bottom view d d d d s s s g top view ss s g dd d d 1 2 3 4 8 7 6 5 rev.2.0: august 2017 www.aosmd.com page 1 of 5 downloaded from: http:///
symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 ? latest advanced 100 na v gs(th) gate threshold voltage -1.3 -1.75 -2.3 v 7 8.5 t j =125c 9.6 11.6 10.5 13 m g fs 50 s v sd -0.7 -1 v i s -4 a c iss 2830 pf c oss 430 pf c rss 365 pf r g 14 28 q g (10v) 50 70 nc q g (4.5v) 25 35 nc q gs 9 nc q gd 12 nc t d(on) 12 ns t r 12.5 ns t d(off) 135 ns t f 63 ns t rr 62 ns q rr 32 nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. m v gs =-10v, v ds =-15v, i d =-16a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =-250 m a, v gs =0v r ds(on) static drain-source on-resistance gate source charge gate drain charge total gate charge switching parameters turn-on delaytime v ds =0v, v gs =25v maximum body-diode continuous current input capacitance gate-body leakage current body diode reverse recovery charge body diode reverse recovery time i f =-16a, di/dt=500a/ m s turn-off delaytime turn-off fall time v gs =-10v, v ds =-15v, r l =0.95 w , r gen =3 w diode forward voltage dynamic parameters v gs =-4.5v, i d =-12a i f =-16a, di/dt=500a/ m s turn-on rise time reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz v ds =v gs, i d =-250 m a output capacitance forward transconductance i s =-1a, v gs =0v v ds =-5v, i d =-16a v gs =-10v, i d =-16a a. the value of r q ja is measured with the device mounted on 1in 2 fr -4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction- to -ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction- to -ambient thermal impedance which is measured with the device mounted on 1in 2 fr -4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev.2.0: august 2017 www.aosmd.com page 2 of 5 downloaded from: http:///
typical electrical and thermal characteristics 0 10 20 30 40 50 1 2 3 4 5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 0 5 10 15 20 0 4 8 12 16 20 r ds(on) (m w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e- 05 1.0e- 04 1.0e- 03 1.0e- 02 1.0e- 01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature ( c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =- 12a v gs =- 10v i d =- 16a 0 5 10 15 20 25 2 4 6 8 10 r ds(on) (m w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =- 5v v gs =-4.5v v gs =- 10v i d =- 16a 25 c 125 c 0 10 20 30 40 50 0 1 2 3 4 5 -i d (a) -v ds (volts) figure 1: on-region characteristics (note e) v gs =-2.5v - 3v -4.5v - 10v -3.5v - 4v rev.2.0: august 2017 www.aosmd.com page 3 of 5 downloaded from: http:///
typical electrical and thermal characteristics 1 10 100 1000 10000 1e - 06 0.0001 0.01 1 100 10000 power (w) pulse width (s) figure 10: single pulse power rating junction- to - ambient (note f) 0 2 4 6 8 10 0 10 20 30 40 50 60 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0.001 0.01 0.1 1 10 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) c oss c rss v ds =- 15v i d =- 16a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) v gs > or equal to -4.5v figure 9: maximum forward biased safe operating area (note f) 10 m s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms r q ja =75 c/w 100ms rev.2.0: august 2017 www.aosmd.com page 4 of 5 downloaded from: http:///
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev.2.0: august 2017 www.aosmd.com page 5 of 5 downloaded from: http:///
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